elektronische bauelemente SMG2305PE -4.5 a, -20 v, r ds(on) 43 m ? p-channel enhancement mosfet 14-jan-2011 rev. b page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. sc-59 top view a l c b d g h j f k e 1 2 3 1 2 3 rohs compliant product a suffix of ?-c? specifies halogen & lead-free description these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellu lar and cordless telephones. features ? low r ds(on) provides higher efficiency and extends battery life. ? low thermal impedance copper leadframe sc-59 saves board space. ? fast switching speed. ? high performance trench technology. package information package mpq leadersize sc-59 3k 7? inch maximum ratings (t a = 25 c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds -20 v gate-source voltage v gs 8 v t a =25c -4.5 continuous drain current 1 t a =70c i d -3.6 a pulsed drain current 2 i dm -10 a t a =25c 1.25 power dissipation 1 t a =70c p d 0.8 w operating junction and st orage temperature range t j , t stg -55 ~ 150 c thermal resistance data t Q 5 sec 100 maximum junction to ambient 1 steady-state r ja 150 c/w notes: 1. surface mounted on 1? x 1? fr4 board. 2. pulse width limited by maximum junction temperature. millimete r millimete r ref. min. max. ref. min. max. a 2.70 3.10 g 0.10 ref. b 2.25 3.00 h 0.40 ref. c 1.30 1.70 j 0.10 0.20 d 1.00 1.40 k 0.45 0.55 e 1.70 2.30 l 0.85 1.15 f 0.35 0.50 esd protection diode 2kv
elektronische bauelemente SMG2305PE -4.5 a, -20 v, r ds(on) 43 m ? p-channel enhancement mosfet 14-jan-2011 rev. b page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a =25c unless otherwise specified) parameter symbol min typ max unit test conditions static gate-threshold voltage v gs(th) -0.7 - - v v ds = v gs , i d = -250 a gate-body leakage i gss - - 100 na v ds = 0v, v gs = 8v - - -1 v ds = -16v, v gs = 0v zero gate voltage drain current i dss - - -10 a v ds = -16v, v gs = 0v, t j =55c on-state drain current 1 i d(on) -10 - - a v ds = -5v, v gs = -4.5v - - 43 v gs = -4.5v, i d = -3.6a - - 54 v gs = -2.5v, i d = -3.1a drain-source on-resistance 1 r ds(on) - - 120 m ? v gs = -1.8v, i d = -2.7a forward transconductance 1 g fs - 12 - s v ds = -5v, , i d = -1.25a diode forward voltage v sd - -0.60 - v i s = -0.46a, v gs = 0v dynamic 2 total gate charge q g - 12.0 - gate-source charge q gs - 2.0 - gate-drain charge q gd - 2.0 - nc i d = -2.4a v ds = -5v v gs = -4.5v turn-on delay time td (on) - 6.5 - rise time t r - 20 - turn-off delay time td (off) - 31 - fall time t f - 21 - ns i l = -1a, v dd = -10v v gen = -4.5v r g = 6 ? notes: 1. pulse test pw Q 300 us duty cycle Q 2%. 2. guaranteed by design, not subject to production testing.
elektronische bauelemente SMG2305PE -4.5 a, -20 v, r ds(on) 43 m ? p-channel enhancement mosfet 14-jan-2011 rev. b page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
elektronische bauelemente SMG2305PE -4.5 a, -20 v, r ds(on) 43 m ? p-channel enhancement mosfet 14-jan-2011 rev. b page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
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